di gital transistors (built-in resistors) dta143t m/dta143te/ dta143tua dta143tsa/ DTA143TCA/dta143tka digital transistor (pnp) equivalent circuit features 1. built-in bias resistors enable the configuration of an inverter circui t without connecting external input resistors(see equivalent circuit) 2. the bias resistors consist of thin-film resistors with complete isolat ion to allow positive biasing of the input.they also have the advantage of almost completely eliminating parasitic effects 3. only the on/off conditions need to be set for operation, making device design easy pin connenctions and marking addreviated symbol: 93 sot-523 addreviated symbol: 93 sot-23-3l sot-23 sot-323 to-92s dta143te dta143tua dta114eca DTA143TCA dta143tka dta143tsa addreviated symbol: 93 addreviated symbol: 93 sot- 7 23 dta114eca dta143t m addreviated symbol: 93 a, - x q ,2011 tiger electronic co.,ltd
collector-base breakdown voltage v (br)cbo -50 v ic=-50a collector-emitter breakdown voltage v (br)ceo -50 v ic=-1ma emitter-base breakdown voltage v (br)ebo -5 v i e =-50a collector cut-off current i cbo -0.5 a v cb =-50v emitter cut-off current i ebo -0.5 a v eb =-4v collector-emitter saturation voltage v ce(sat) -0.3 v i c =-5ma,i b =-0.25ma dc current transfer ratio h fe 100 600 v ce =-5v,i c =-1ma input resistance r 1 3.29 4.7 6.11 k ? transition frequency f t 250 mhz v ce =-10v ,i e =5ma,f=100mhz absolute maximum ratings(ta=25 ) parameter symbol limits (dt a 143t ) unit m e ua ca ka sa collector-base voltage v (br)cbo - 50 v collector-emitter voltage v (br)ceo - 50 v emitter-base voltage v (br)ebo - 5 v collector current i c - 100 ma collector power dissipation p c 100 150 200 300 mw junction temperature tj 150 storage temperature tstg -55~150 electrical characteristics (ta=25 ) parameter s ymbol min typ max unit conditions a,jun ,211
-1 -10 -100 1000 -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1e-3 -0.01 -0.1 -1 -10 0 25 50 75 100 125 150 0 50 100 150 200 250 300 350 400 -0.1 -1 -10 -100 -0.01 -0.1 -1 0481 21 62 0 0 2 4 6 8 10 -0.1 -1 -10 -100 -0.1 -1 -10 -100 100 t a =25 t a =100 v ce =-5v 300 -3 -30 h fe i c collector current i c (ma) dc current gain h fe off characteristics t a =100 t a =25 v ce =-5v collector current i c (ma) input voltage v i(off) (v) dta143tm dta143tsa dta143tua/ca/ka dta143te p d t a power dissipation p d (mw) ambient temperature t a ( ) -0.3 -0.3 -0.03 -30 -3 v cesat i c t a =25 t a =100 i c /i b =20 collector emitter voltage v cesat (v) collector current i c (ma) f=1mhz t a =25 c o v r output capacitance c o (pf) reverse bias voltage v r (v) -30 -3 -0.3 DTA143TCA typical characteristics on characteristics t a =25 t a =100 v ce =-0.3v -3 -0.3 -30 collector current i c (ma) input voltage v i(on) (v) a, - x q ,2011
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